Semiconductors

Items 1 to 36 of 66 total

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VELLEMAN Diode Assortment 120pc, K/DIODE1

$14.90
quantity: 120 pieces diodes & bridge rectifier Contains: 2 x 110B2 50 x 1N4007 50 x 1N4148 14 x 1N5408 4 x 6A6

ELENCO 80 piece Diode Assortment, DIOK-80

$14.90
Contains an assortment of silicon, zener, germanium, bridge, and switching diodes 80 pieces total, 20 types Packaged in a cardboard organizer box

NTE 1N914 General Purpose Diode 20 pack, 1N914

$1.08
Standard silicone switching diode Forward Voltage Drop (VF) IF = 10mA Reverse Current IR VR = 20V VR = 20V, TJ = +150°C VR = 75V Breakdown Voltage V(BR) IR = 100µA, Note 1 Diode Capacitance (CD) VR = 0, f = 1MHz, VHF = 50mV Rectification Efficiency ηr VHF = 2V, f = 100MHz Reverse Recovery Time trr IF = IR = 10mA, iR = 1mA IF = 10mA, VR = 6V, iR = 0.1  IR, RL = 100Ω

NTE 1N4148 Switching Diode 20 pack, 1N4148

$1.08
Standard silicone switching diode Forward Voltage Drop (VF) IF = 10mA Reverse Current IR VR = 20V VR = 20V, TJ = +150°C VR = 75V Breakdown Voltage V(BR) IR = 100µA, Note 1 Diode Capacitance (CD) VR = 0, f = 1MHz, VHF = 50mV Rectification Efficiency ηr VHF = 2V, f = 100MHz Reverse Recovery Time trr IF = IR = 10mA, iR = 1mA IF = 10mA, VR = 6V, iR = 0.1  IR, RL = 100Ω

NTE 1N34A Germanium Diode 10 pack, 1N34A

$7.00
Forward Voltage (VF), IF = 9mA Reverse Leakage Current (IR), VR = 10V Capacity (Cj) VR = 1V, f = 1MHz Peak Reverse Voltage, PRV: 75V Average Forward Current, IF(AV): 50mA Peak Forward Current, IF(Peak): 150mA Surge Current (1sec), IFSM: 50mA Operating Junction Temperature, TJ: +70C Storage Temperature Range, Tstg: −55 to +70C

NTE Silicon Bridge Rectifier 1.5A 600V, 5305

$1.87
High Reverse Voltage to 1000V Surge Overload Ratings to 50A (Peak) Good for PC Board Assembly

NTE Single Phase Bridge Rectifier 4A 200V, 5309

$2.97
Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal For Printed Circuit Boards

NTE MOSFET P-Ch, Enhancement Mode High Speed Switch, 2373

$7.15
Dynamic dv/dtRating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements  TO220 Type Package

NTE Silicon NPN Transistor Audio Amplifier, Switch, 123AP

$1.33
Collector−Emitter Voltage, VCEO: 40V Collector−Base Voltage, VCB: 60V Emitter−Base Voltage, VEB: 6V Continuous Collector Current, IC: 600mA Total Device Dissipation (TA = +25°C), PD: 625mW Derate Above 25°C: 5.0mW/°C Total Device Dissipation (TC = +25°C), PD: 1.5W Derate Above 25°C: 12mW/°C Operating Junction Temperature Range, TJ: −55° to +150°C Storage Temperature Range, Tstg: −55° to +150°C Thermal Resistance, Junction to Case, RthJC: 83.3°C/W Thermal Resistance, Junction to Ambient, RthJA: 200°C/W

NTE N-Channel MOSFET IRF520 equivalent, 2382 NTE

$4.79
Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Rugged Polysilicon Gate Cell Structure Lower Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability  TO220 type package 

NTE 2N3906 PNP Transistor 5 pack, 2N3906

$0.84
Collector-Emitter Voltage, VCEO: 80V Collector-Base Voltage, VCBO: 80V Emitter-Base Voltage, VEBO: 5V Continuous Collector Current, IC: 800mA Total Device Dissipation (TA = 25°C), PD: 625mW Derate Above 25°C 5mW/°C Operating Junction Temperature Range, TJ: -55° to +150°C Storage Temperature Range, Tstg:-55° to +150°C Thermal Resistance, Junction to Case, RθJC: 83.3°C/W Thermal Resistance, Junction to Ambient, RθJA: 200°C/W

NTE 2N3904 NPN Transistor 5 pack, 2N3904

$0.84
Collector−Emitter Voltage, VCEO: 40V Collector−Base Voltage, VCB: 60V Emitter−Base Voltage, VEB: 6V Continuous Collector Current, IC: 600mA Total Device Dissipation (TA = +25°C), PD: 625mW Derate Above 25°C: 5.0mW/°C Total Device Dissipation (TC = +25°C), PD: 1.5W Derate Above 25°C: 12mW/°C Operating Junction Temperature Range, TJ: −55° to +150°C Storage Temperature Range, Tstg: −55° to +150°C Thermal Resistance, Junction to Case, RthJC: 83.3°C/W Thermal Resistance, Junction to Ambient, RthJA: 200°C/W

VELLEMAN Transistor Assortment 100pc, K/TRANS1

$14.90
quantity: 100 pieces contents: BC547B: 28 BC557B: 28 BC337: 12 BC327: 12 BC517: 6 BC516: 6 BD139: 4 BD140: 4

ELENCO Transistor Assortment 100pc, TRAK-100

$14.90
Contains an assortment of transistors, NPN, PNP, FETs, Darlington, and Power. 100 pieces total, 15 types Packed in a cardboard organizer box.

NTE MOSFET N-Channel, Enhancement Mode High Speed Switch, 2395

$5.29
Dynamic dv/dt Rating +175C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements  TO220 Type Package

NTE 2N2222A NPN Transistor 2 pack, 2N2222A

$1.75
Low Collector Saturation Voltage: 1V (Max) High Current Gain–Bandwidth Product: fT = 300MHz (Min) @ IC 20mA Operating Temperature Range, TJ: –65° to +200°C \Storage Temperature Range, Tstg:  –65° to +200°C

NTE Silicon NPN Power Audio Power Amp Transistor TO-3 case style, 2N3055

$2.42
DC Current Gain: hFE = 20 – 70 @ IC = 4A Collector–Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A Excellent Safe Operating Area Collector–Emitter Voltage, VCEO: 60V ]Collector–Emitter Voltage, VCER:  70V Collector–Base Voltage, VCB: 100V Emitter–Base Voltage, VEB: 7V Continuous Collector Current, IC: 15A Base Current, IB: 7A Total Device Dissipation (TC = +25°C), PD: 115W Derate Above 25°C: 0.657W/°C Operating Junction Temperature Range, TJ: –65° to +200°C Storage Temperature Range, Tstg: –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC: 1.52°C/W

NTE MOSFET P-Ch, Enhancement Mode High Speed Switch, 2372

$4.45
Dynamic dv/dt Rating Fast Switching Ease of Paralleling Simple Drive Requirements TO220 Case Style 

NTE Optoisolator NPN Transistor Output 80V 50mA, 3223-1

$0.87
High Current Transfer Ratio (80% min) High Isolation Voltage (5.3kVRMS, 7.5kVPK) High BVCEO (80Vmin) 

NTE Optoisolator NPN Transistor Output 80V 50mA, 3223-2

$1.42
High Current Transfer Ratio (80% min) High Isolation Voltage (5.3kVRMS, 7.5kVPK) High BVCEO (80Vmin)

NTE Optoisolator NPN Transistor Output 80V 50mA, 3223-4

$2.42
High Current Transfer Ratio (80% min) High Isolation Voltage (5.3kVRMS, 7.5kVPK) High BVCEO (80Vmin) A

SPARKFUN Laser Module - Green, COM-09906

$14.95
532nm Green Laser 5mW output power (FDA Class IIIa) 2.5V to 4.5V input voltage Max current: 300mA Dimensions: 56 x 11.5mm

PHILMORE Cadmium Sulfide Photo Cell 2pk, 10810

$4.02
10mm OD...400mWEpoxy - Coated Low Profile CellHigh reliable power dissipation Compact dimensions

PHILMORE Cadmium Sulfide Photo Cell 3pk, 10807

$3.54
7mm OD...150mW Epoxy - Coated Low Profile Cell High reliable power dissipation  Compact dimensions

PHILMORE Cadmium Sulfide Photo Cell 3pk, 10805

$2.26
5mm OD...125mW Epoxy - Coated Low Profile Cell High reliable power dissipation  Compact dimensions

OSEPP Light Sensor Module, LIGHT-01

$3.95
Suitable supply voltage: +3 to 5Vdc Analog voltage output: 0 to 5 Vdc Detects ambient light density Works with CdsPhotoresistor Interface with microcontrollers and logic circuits Analog sensors Uses PH 2.0 socket Special sensor with Arduino expansion boards

NTE TTL - Quad 2-Input Positive NAND Gate, 7400

$3.48
Supply Voltage, VCC: 7V DC Input Voltage, VINP: 5.5V Operating Temperature Range, TA: 0C to +70C Storage Temperature Range, Tstg: −65C to +150C

NTE TTL - High Speed CMOS Hex Schmitt Trigger Inverter, 74HC14

$0.90
Output Drive Capability: 10 LSTTL Loads Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage range: 2V to 6V Low Input Current: 1.0μA High Noise Immunity Characteristics of CMOS Devices Supply Voltage, VCC: −0.5 to +7.0V DC Input Voltage, VIN: −0.5 to VCC +0.5V DC Output Voltage, VOUT:  −0.5 to VCC +0.5V

NTE TTL - High Speed CMOS Hex Inverter, 74HC04

$0.90
Output Drive Capability: 10 LSTTL Loads Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage range: 2V to 6V Low Input Current: 1.0μA High Noise Immunity Characteristics of CMOS Devices Supply Voltage, VCC: −0.5 to +7.0V DC Input Voltage, VIN: −1.5 to VCC +1.5V DC Output Voltage, VOUT: −0.5 to VCC + 0.5V Clamp Diode Current, IIK, IOK: ±20mA DC Output Current (Per Pin), IOUT: ±25mA DC VCC or GND Current (Per Pin), ICC: ±50mA Power Dissipation (Note 3), P: 600mW Storage Temperature Range, Tstg: −65°C to +150°C Lead Temperature (During Soldering, 10sec), TL: +260°C

NTE TTL - Quad 2-Input Exclusive-OR Gate, 74LS86

$1.62
Supply Voltage, VCC: 7V Input Voltage: 7V Total Power Dissipation: 30.5mW Operating Temperature Range, TA: 0C to +70C Storage Temperature Range, Tstg: −65C to +150C