Infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue−grey tinted plastic T−1 3/4 (5mm) package.

Applications: Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation and angle requirements in combination with PIN photodiodes or phototransistors.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

• Reverse Voltage, VR ................................................................. 5V
• Forward Current, IF
• Continuous ............................................................... 150mA
• Peak (tp = 100μs, tp/T = 0.5) ................................................ 300mA
• Surge Forward Current (tp = 100μs), IFSM ............................................ 2.5A
• Power Dissipation, PD .......................................................... 210mW
• Junction Temperature, TJ ......................................................... +100°C
• Operating Temperature Range, Topr ........................................ −55° to +100°C Storage
• Temperature Range, Tstg .......................................... −55° to +100°C
• Lead Soldering Temperature (t ≤ 5sec, 2mm from case), TL ........................... +260°C
• Thermal Resistance, Junction−to−Ambient, RthJA ................................... 375K/W

Electrical Characteristics: (TA = +25°C unless otherwise specified)