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Improved Inductive Ruggedness
Fast Switching Times
Rugged Polysilicon Gate Cell Structure
Lower Input Capacitance
Extended Safe Operating Area
Improved High Temperature Reliability
TO220 type package
Low Collector Saturation Voltage: 1V (Max)
High Current Gain–Bandwidth Product: fT = 300MHz (Min) @ IC 20mA
Operating Temperature Range, TJ: –65° to +200°C
\Storage Temperature Range, Tstg: –65° to +200°C