Transistors

13 Item(s)

Grid List

VELLEMAN Transistor Assortment 100pc, K/TRANS1

$14.90
quantity: 100 pieces contents: BC547B: 28 BC557B: 28 BC337: 12 BC327: 12 BC517: 6 BC516: 6 BD139: 4 BD140: 4

NTE N-Channel MOSFET IRF520 equivalent, 2382 NTE

$4.79
Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Rugged Polysilicon Gate Cell Structure Lower Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability  TO220 type package 

NTE MOSFET P-Ch, Enhancement Mode High Speed Switch, 2373

$7.15
Dynamic dv/dtRating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements  TO220 Type Package

NTE MOSFET P-Ch, Enhancement Mode High Speed Switch, 2372

$4.45
Dynamic dv/dt Rating Fast Switching Ease of Paralleling Simple Drive Requirements TO220 Case Style 

NTE Silicon NPN Transistor Audio Amplifier, Switch, 123AP

$1.33
Collector−Emitter Voltage, VCEO: 40V Collector−Base Voltage, VCB: 60V Emitter−Base Voltage, VEB: 6V Continuous Collector Current, IC: 600mA Total Device Dissipation (TA = +25°C), PD: 625mW Derate Above 25°C: 5.0mW/°C Total Device Dissipation (TC = +25°C), PD: 1.5W Derate Above 25°C: 12mW/°C Operating Junction Temperature Range, TJ: −55° to +150°C Storage Temperature Range, Tstg: −55° to +150°C Thermal Resistance, Junction to Case, RthJC: 83.3°C/W Thermal Resistance, Junction to Ambient, RthJA: 200°C/W

NTE 2N3906 PNP Transistor 5 pack, 2N3906

$0.84
Collector-Emitter Voltage, VCEO: 80V Collector-Base Voltage, VCBO: 80V Emitter-Base Voltage, VEBO: 5V Continuous Collector Current, IC: 800mA Total Device Dissipation (TA = 25°C), PD: 625mW Derate Above 25°C 5mW/°C Operating Junction Temperature Range, TJ: -55° to +150°C Storage Temperature Range, Tstg:-55° to +150°C Thermal Resistance, Junction to Case, RθJC: 83.3°C/W Thermal Resistance, Junction to Ambient, RθJA: 200°C/W

NTE 2N3904 NPN Transistor 5 pack, 2N3904

$0.84
Collector−Emitter Voltage, VCEO: 40V Collector−Base Voltage, VCB: 60V Emitter−Base Voltage, VEB: 6V Continuous Collector Current, IC: 600mA Total Device Dissipation (TA = +25°C), PD: 625mW Derate Above 25°C: 5.0mW/°C Total Device Dissipation (TC = +25°C), PD: 1.5W Derate Above 25°C: 12mW/°C Operating Junction Temperature Range, TJ: −55° to +150°C Storage Temperature Range, Tstg: −55° to +150°C Thermal Resistance, Junction to Case, RthJC: 83.3°C/W Thermal Resistance, Junction to Ambient, RthJA: 200°C/W

NTE Silicon NPN Power Audio Power Amp Transistor TO-3 case style, 2N3055

$2.42
DC Current Gain: hFE = 20 – 70 @ IC = 4A Collector–Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A Excellent Safe Operating Area Collector–Emitter Voltage, VCEO: 60V ]Collector–Emitter Voltage, VCER:  70V Collector–Base Voltage, VCB: 100V Emitter–Base Voltage, VEB: 7V Continuous Collector Current, IC: 15A Base Current, IB: 7A Total Device Dissipation (TC = +25°C), PD: 115W Derate Above 25°C: 0.657W/°C Operating Junction Temperature Range, TJ: –65° to +200°C Storage Temperature Range, Tstg: –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC: 1.52°C/W

NTE 2N2222A NPN Transistor 2 pack, 2N2222A

$1.75
Low Collector Saturation Voltage: 1V (Max) High Current Gain–Bandwidth Product: fT = 300MHz (Min) @ IC 20mA Operating Temperature Range, TJ: –65° to +200°C \Storage Temperature Range, Tstg:  –65° to +200°C

ELENCO Transistor Assortment 100pc, TRAK-100

$14.90
Contains an assortment of transistors, NPN, PNP, FETs, Darlington, and Power. 100 pieces total, 15 types Packed in a cardboard organizer box.

NTE MOSFET N-Channel, Enhancement Mode High Speed Switch, 2395

$5.29
Dynamic dv/dt Rating +175C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements  TO220 Type Package